Hot-electron currents in deep-submicrometer MOSFETs
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 200-203
- https://doi.org/10.1109/iedm.1988.32790
Abstract
A comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented. The substrate- and gate-current characteristics for devices with channel lengths as small as 0.2 mu m and oxide thickness as thin as 55 AA are examined. Implications for MOSFET reliability and EPROM programming are discussed. In the deep-submicrometer regime, established hot-electron concepts and models are found to be applicable; however, consideration of the finite depth of the current path and current-crowding-induced weak gain control becomes much more important. With these modifications, physical analytical models for substrate and gate currents are developed and verified for deep-submicrometer devices.<>Keywords
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