Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
- 1 October 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (10), 1409-1422
- https://doi.org/10.1016/0038-1101(96)00045-7
Abstract
No abstract availableKeywords
This publication has 121 references indexed in Scilit:
- Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 KSolid-State Electronics, 1996
- Silicon carbide microwave field-effect transistor: Effect of field dependent mobilitySolid-State Electronics, 1995
- Noise analysis of silicon carbide JFETsSolid-State Electronics, 1995
- Deposition and characterization of diamond, silicon carbide and gallium nitride thin filmsJournal of Crystal Growth, 1994
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- SiC bipolar devicesMaterials Science and Engineering B, 1992
- SiC boule growth by sublimation vapor transportJournal of Crystal Growth, 1991
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Electrical properties of ion-implanted p-n junction diodes in β-SiCJournal of Applied Physics, 1988
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987