Phenomena influencing the temperature behavior of stimulated emission in GaAs p-n junctions
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 2 (1), 9-15
- https://doi.org/10.1109/jqe.1966.1073739
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Time-resolved spectral output of pulsed GaAs lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1964
- High-efficiency injection laser at room temperatureProceedings of the IEEE, 1964
- Output power from GaAs lasers at room temperatureProceedings of the IEEE, 1964
- Threshold Currents for Line Narrowing in GaAs Junction DiodesJournal of Applied Physics, 1963
- Room temperature operation of gallium arsenide lasersPhysics Letters, 1963
- The Maser—New Type of Microwave Amplifier, Frequency Standard, and SpectrometerPhysical Review B, 1955