Growth of Anthracene Whiskers by Vapor Deposition

Abstract

Anthracene whiskers were observed to grow at low supersaturations consistent with the screw dislocation mechanism of whisker growth. Whiskers were observed to grow coherently from a larger crystal in a few crystallographic directions. The simultaneous growth of whiskers in the habit plane and normal to the habit plane, for example, requires a regenerative axial growth defect. A screw dislocation appears to be the only line defect with the required properties.