Growth and Properties of β-SiC Single Crystals

Abstract

Chemical, electrical, and optical measurements were performed on n‐ and p‐type β‐silicon carbide crystals grown from pure or doped carbon‐saturated silicon melts. Pure, transparent yellow crystals showed no detectable impurities and had carrier concentrations in the range of 10¹⁶ cm⁻³. Extensive twinning was observed. Uncorrected electron mobilities of 700–1000 cm²/V·sec were measured at room temperature. Intense injection electroluminescence, peaking at 2.28 eV and 2.0 eV, was observed in many diodes. Strong photoluminescence was observed in aluminum‐doped crystals at 77°K and at room temperature when irradiated with uv light.