High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 380-384
- https://doi.org/10.1016/s0022-3093(99)00735-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growthJournal of Applied Physics, 1999
- Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous siliconPlasma Physics and Controlled Fusion, 1999
- Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film PropertiesMRS Proceedings, 1999
- Temperature and growth-rate effects on the hydrogen incorporation in a-Si:HJournal of Non-Crystalline Solids, 1998
- Hydrogen in a-Si:H Deposited by an Expanding Thermal Plasma: A Temperature, Growth Rate and Isotope StudyMRS Proceedings, 1998
- Electron emission from deep states and evaluation of the density of states in a-Si:HJournal of Applied Physics, 1995
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Recombination processes in-Si:H: Spin-dependent photoconductivityPhysical Review B, 1983
- Theory of trap-controlled transient photoconductionPhysical Review B, 1977