Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In1−xGaxP
- 1 February 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 73 (2), 633-639
- https://doi.org/10.1002/pssb.2220730231
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- On the Γ-Γ and Γ-X transitions of the GaxIn1−xP alloysJournal of Applied Physics, 1974
- The direct-indirect transition in In1−xGaxPSolid State Communications, 1974
- Electroreflectance and Band Structure ofAlloysPhysical Review B, 1972
- Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K)Journal of Applied Physics, 1972
- Photoluminescence of undoped GaxIn1−xP alloysPhysica Status Solidi (a), 1971
- Photoluminescence Processes inat 2°KPhysical Review B, 1971
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- Band Structure of InGaP from Pressure ExperimentsJournal of Applied Physics, 1970
- Applications of photoluminescence excitation spectroscopy to the study of indium gallium phosphide alloysJournal of Physics D: Applied Physics, 1970
- (In,Ga)P alloys: photoluminescence excitation and cathodoluminescence of zinc doped indirect gap alloysJournal of Physics C: Solid State Physics, 1970