Radiation-induced interstitial boron defects in gallium phosphide and gallium arsenide

Abstract

GaP containing boron but a negligible concentration of silicon has been irradiated in stages with 2 MeV electrons. Infrared absorption measurements have been made at each stage to monitor the concentration of the radiation-induced interstitial defect B(1), which involves a single boron atom. A previous uncertainty relating to the possible involvement of silicon impurities in the defect in other GaP and GaAs crystals has been resolved. The defect is now shown to have the structure of a boron atom complexed with an intrinsic interstitial atom.