Strongly modulated conductivity in a perovskite ferroelectric field-effect transistor
- 1 January 2001
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 27 (1), 17-19
- https://doi.org/10.1134/1.1345155
Abstract
An all-perovskite field-effect transistor with a (Pb0.95La0.05)(Zr0.2Ti0.8)O3 gate insulator exhibits a strongly modulated room-temperature conductivity in a La1.94Sr0.06CuO4 channel. The channel conductivity is controlled by the hopping mechanism with variable jump length and determined by the Coulomb gap at the Fermi level.Keywords
This publication has 8 references indexed in Scilit:
- Electrical transport throughp-nandp-pheterostructures modulated by bound charges at a ferroelectric surface: Ferroelectricp-ndiodePhysical Review B, 1999
- Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin filmsJournal of Applied Physics, 1998
- Ferroelectric field effect in ultrathin SrRuO3 filmsApplied Physics Letters, 1997
- Effect of ferroelectric polarization on current response of PZT thin filmsIntegrated Ferroelectrics, 1995
- Epitaxial all-perovskite ferroelectric field effect transistor with a memory retentionApplied Physics Letters, 1995
- Epitaxial growth and properties of YBa2Cu3Ox-Pb(Zr0.6Ti0.4)O3-YBa2Cu3Ox trilayer structure by laser ablationApplied Physics Letters, 1992
- Synthesis, characterization, and superconducting and magnetic properties of electrochemically oxidized La2CuO4+δ and La2−xSrxCuO4+δ (0.01 ≤ x ≤ 0.33, 0.01 ≤ δ ≤ 0.36)Physica C: Superconductivity and its Applications, 1992
- Electronic anisotropy in single-crystalPhysical Review B, 1988