On the optimization of the gallium arsenide injection laser for maximum CW power output
- 1 April 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 2 (4), 80-83
- https://doi.org/10.1109/jqe.1966.1073832
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Thermal Problems of the Injection LaserIBM Journal of Research and Development, 1965
- Gaussian impurity bands in GaAsSolid State Communications, 1965
- Thermal Conductivity of GaAs and GaAs1−xPx Laser SemiconductorsJournal of Applied Physics, 1965
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964
- Thermal Limitations on the Energy of a Single Injection Laser Light PulseIBM Journal of Research and Development, 1964
- Characteristics of a Continuous High-Power GaAs Junction LaserJournal of Applied Physics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Temperature Limitation on Continuous Operation of GaAs LasersJournal of Applied Physics, 1963
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960