Intervalley scattering in Ga1−xAlxAs alloys
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9), 5643-5646
- https://doi.org/10.1063/1.329498
Abstract
Hall mobility at 300 K in high‐purity epitaxial layers of n‐type Ga1−xAlxAs with electron concentrations in the range (5–10)×1015 cm−3 has been measured as a function of alloy compositions in the range 0⩽x⩽0.78 and as a function of hydrostatic pressure for various values of alloy compositions. The data show that nonequivalent intervalley scattering between the direct and various indirect minima play an important role in limiting the electron mobility in this alloy.Keywords
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