Electrolytic etching and electron mobility of GaAs for FET's
- 30 November 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (11), 1119-1123
- https://doi.org/10.1016/0038-1101(74)90155-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistorsElectronics Letters, 1973
- Theory of Electron Galvanomagnetics in Crystals: Hall Effect in Semiconductors and SemimetalsPhysica Status Solidi (b), 1973
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Electron Mobility in Ge, Si, and GaPPhysica Status Solidi (b), 1972
- ANOMALOUSLY HIGH ``MOBILITY'' IN SEMICONDUCTORSApplied Physics Letters, 1971
- Preliminary Results on the Oxidation of GaAs and GaP during Chemical EtchingJournal of the Electrochemical Society, 1971