Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application
- 1 January 2009
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 27 (1), 378-383
- https://doi.org/10.1116/1.3021036
Abstract
This work reports on the study of two HfO 2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO 2 films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode.Keywords
This publication has 28 references indexed in Scilit:
- High capacitance density metal-insulator-metal structures based on a high-κ HfNxOy–SiO2–HfTiOy laminate stackApplied Physics Letters, 2008
- Investigation of Scaling Limits for PECVD SiN and ALD HfO2/Al2O3 Integrated MIM CapacitorsECS Transactions, 2007
- Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor ApplicationsIEEE Electron Device Letters, 2007
- High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacksApplied Physics Letters, 2007
- Thermal Leakage Improvement by Using a High-Work-Function Ni Electrode in High-κ TiHfO Metal–Insulator–Metal CapacitorsJournal of the Electrochemical Society, 2007
- Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitorsJournal of Vacuum Science & Technology A, 2006
- Metallorganic Chemical Vapor Deposition of Sr-Ta-O and Bi-Ta-O Films for Backend Integration of High-k CapacitorsJournal of the Electrochemical Society, 2006
- MIM capacitors using amorphous high-k PrTixOy dielectricsMicroelectronic Engineering, 2005
- Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applicationsJournal of Applied Physics, 2003
- Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 filmsJournal of Applied Physics, 2001