On the kinetics of nitrogen incorporation in GaP LPE layers using NH3 vapour doping
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 210-214
- https://doi.org/10.1016/0022-0248(75)90133-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Nitrogen concentration in GaP measured by optical absorption and by proton-induced nuclear reactionsJournal of Applied Physics, 1974
- Nitrogen Doping Behavior in GaP Using NH[sub 3] as the Dopant SourceJournal of the Electrochemical Society, 1974
- The Equilibrium Pressure of N2 over GaNJournal of the Electrochemical Society, 1972
- Efficient green electroluminescent junctions in GaPSolid-State Electronics, 1971
- CLIII.—The thermal decomposition of ammonia upon various surfacesJournal of the Chemical Society, Transactions, 1925