Observations on dislocation nodes in silicon
- 1 June 1965
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 11 (114), 1315-1319
- https://doi.org/10.1080/14786436508224939
Abstract
Dislocation nodes which are not extended may appear to be extended in transmission electron micrographs because of a diffraction contrast effect. Any values of stacking-fault energy deduced from such nodes using the conventional formulae are likely to be incorrect. Nodes in silicon seem to be of this type.Keywords
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