Preparation of Bi4Ti3O12 films by MOCVD and their application to memory devices
- 1 January 1995
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 6 (1-4), 35-46
- https://doi.org/10.1080/10584589508019352
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Preparation of C-Axis-Oriented Bi4Ti3O12 Thin Films by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Ferroelectric MemoriesScience, 1989
- Memory retention and switching behavior of metal-ferroelectric-semiconductor transistorsFerroelectrics, 1976
- Ferroelectric field-effect memory device using Bi4Ti3O12 filmJournal of Applied Physics, 1975
- The research status and device potential of ferroelectric thin filmsFerroelectrics, 1972