Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique
- 1 January 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (1), 1-2
- https://doi.org/10.1063/1.1653956
Abstract
An experimental technique is described for determining the electrical properties of thin semiconducting films as a function of distance from the surface. The method is applied to silicon on sapphire films nominally 1 μ thick and doped ``n'' type on the order of (2–6)×1016/cm3, and the variation in average mobility and carrier concentration with depth into the layer is determined.Keywords
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