Steady state lattice heating by hot carriers in silicon bipolar transistors
- 31 August 1987
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (8), 887-888
- https://doi.org/10.1016/0038-1101(87)90019-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Accurate calculations of the forward drop and power dissipation in thyristorsIEEE Transactions on Electron Devices, 1978
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962