Activation of low dose silicon implants in GaAs by multiply scanned electron beams

Abstract

Low dose implants of Si+ into semi-insulating GaAs have been annealed with the multiply scanned electron beam processing system. The activation of ions was about 55%, with a high peak concentration and a carrier mobility of 3800 cm2/Vs. The samples were unencapsulated and showed no surface degradation after annealing.