Field controlled charge trapping in tunnel oxides
- 1 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9), 910-912
- https://doi.org/10.1063/1.94931
Abstract
The formation of oxide traps and interface traps in 3.5-nm oxides has been investigated using a metal-oxide-silicon capacitor subjected to forward bias stress. Negative charged traps causing current reduction were created by injecting electrons from a gate electrode in an oxide field greater than 3.7 MV/cm. Increase of current and negative shift in the capacitance-voltage curve, which indicated the formation of positively charged traps and interface traps, was observed for oxide fields greater than 5.4 MV/cm.Keywords
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