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Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides
Home
Publications
Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides
Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides
IC
I.C. Chen
I.C. Chen
SH
S. Holland
S. Holland
CH
C. Hu
C. Hu
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1 January 1986
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1986.191278
Abstract
No abstract available
Keywords
ANNEALING
TUNNELING
HOT CARRIERS
IMPACT IONIZATION
OXIDATION
Cited by 45 articles