InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
- 14 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (11), 892-894
- https://doi.org/10.1063/1.99264
Abstract
Strained In0.52Al0.48As/InAs single quantum wells have been grown by molecular beam epitaxy on InP substrates and their structural quality and commensurability demonstrated by transmission electron microscopy. Intense photoluminescence in the wavelength range of 1.2–1.6 μm for well widths between 10 and 30 Å was obtained, indicating a very efficient carrier collection into the highly (3.4%) biaxially compressed InAs wells.Keywords
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