Resistivity Lowering of Palladium Silicide Film due to Post-Annealing

Abstract

Resistivity, X-ray diffraction and transmission electron microscope measurements were performed on as-formed and post-annealed palladium silicide films. As the post-annealing temperature was increased, resistivity of the films decreased, and X-ray diffraction and transmission electron microscope measurements showed strong preferred orientation of (0016) reflection and grain growth of palladium silicide, respectively. It is thought that these structural changes affect the resistivity lowering of post-annealed palladium silicide film.