Exchange interaction in type-II quantum wells
- 15 January 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (3), 1970-1972
- https://doi.org/10.1103/physrevb.39.1970
Abstract
The heavy-hole-exciton splitting in type-II quantum wells due to the electron-hole exchange interaction is calculated in an effective-mass approximation. Good agreement with the trends observed in recent optically detected magnetic resonance experiments by van Kesteren and colleagues has been found. By comparison of theory with experiment the electron-hole exchange interaction for bulk GaAs is determined to be ≃80 meV/molecule.
Keywords
This publication has 7 references indexed in Scilit:
- Exciton mixing in quantum wellsPhysical Review B, 1988
- Short-period GaAs-AlAs superlattices: Optical properties and electronic structurePhysical Review B, 1988
- Optically Detected Magnetic Resonance Study of a Type-ii GaAs-AlAs Multiple Quantum WellPhysical Review Letters, 1988
- Exchange effects on excitons in quantum wellsPhysical Review B, 1988
- Theory of heavy-hole magnetoexcitons in GaAs-(Al,Ga)As quantum-well heterostructuresPhysical Review B, 1988
- Exciton binding energy in type-II GaAs-(Al,Ga)As quantum-well heterostructuresPhysical Review B, 1987
- ExcitonsPublished by Springer Nature ,1979