On the oxidation and removal by diffusion of Mg in Al and Al-Mg alloys
- 1 February 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 15 (134), 329-340
- https://doi.org/10.1080/14786436708227705
Abstract
Electrical resistance is measured at 293°k and 4.2·k on films of aluminium and Al—Mg alloys, of thicknesses 0·04 mm to 0.7 mm, after various annealing times at temperatures from 400°c to 620°c. The weíght increase due to oxidation is also determined. The connection between oxidation rate and reduction in magnesium content observed during annealing explains some of the discrepancies in the literature. Al—Zn alloys behave differently.Keywords
This publication has 14 references indexed in Scilit:
- The effects of environment on surface pit formation in aluminiumPhilosophical Magazine, 1966
- Structure Model for Low-Temperature Thermal Oxidation KineticsJournal of Applied Physics, 1965
- A refining effect in super purity aluminiumPhilosophical Magazine, 1965
- Measurement of Equilibrium Vacancy Concentrations in Dilute Aluminum-Magnesium AlloysPhysical Review B, 1965
- Sondheimer oscillations in the hall effect of aluminiumPhilosophical Magazine, 1964
- Electrical Size Effect in AluminumJournal of Applied Physics, 1963
- Zone Refining of AluminumReview of Scientific Instruments, 1963
- Oxidation of High-Purity Aluminum and 5052 Aluminum-Magnesium Alloy at Elevated TemperaturesJournal of the Electrochemical Society, 1961
- The contribution due to phonon drag to the thermopower of aluminiumPhysica, 1960
- Aluminum Reactions with Water Vapor, Dry Oxygen, Moist Oxygen, and Moist Hydrogen between 500° and 625°CJournal of the Electrochemical Society, 1960