GaAs1-xPxLight Emitting Diodes Produced by Zn Ion Implantation. I. Dose Dependence of Properties of Implanted Diodes

Abstract

Properties of GaAs_1-xP_x light-emitting diodes produced by Zn ion implantation have been investigated as functions of ion dose. The luminescence efficiency of the implanted diode peaks at a dose of around 4~8×10¹⁵ cm^-2 and exceeds more than twice that of conventional thermally diffused diodes. The implanted diode has a p⁺ -p^- -n structure in contrast to the p⁺ -n structure of the diffused diode, and the width ratio (p^-/p⁺) decreases as a function of the logarithm of the ion dose. The width of the depletion layer and the breakdown voltage of the implanted diode are larger than those of the diffused diode and decreases with increasing ion dose. The intensity ratio of the lower energy peak to the higher energy peak in EL spectra at 77 K increases with increasing ion dose. The relative intensity of the lower energy peak in the diffused diode with high Zn concentration is weak and the half-widths of peaks are large compared with the implanted diode.