Application of Fletcher-Powell's optimization method to process/device simulation of MOSFET characteristics
- 31 March 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (3), 201-203
- https://doi.org/10.1016/0038-1101(82)90108-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Threshold-sensitivity minimization of short-channel MOSFET's by computer simulationIEEE Transactions on Electron Devices, 1980
- Two-dimensional semiconductor analysis using finite-element methodIEEE Transactions on Electron Devices, 1979
- Survey of Circuit-Oriented Optimization TechniquesIEEE Transactions on Circuit Theory, 1971
- A Rapidly Convergent Descent Method for MinimizationThe Computer Journal, 1963