Soft Errors Induced by Energetic Protons
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6), 4905-4910
- https://doi.org/10.1109/tns.1979.4330248
Abstract
Two types of 4K dynamic RAM devices have been shown to exhibit soft errors when exposed to energetic protons. Considerable variation in sensitivity was found among devices, even those of the same model. For individual devices the soft error cross section increased with proton energy over the range of proton energies of from 18 to 130 MeV. The types of errors observed and their locations in memory were also found to depend on the beam energy.Keywords
This publication has 3 references indexed in Scilit:
- Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliabilityIEEE Transactions on Electron Devices, 1979
- Cosmic Ray Induced in MOS Memory CellsIEEE Transactions on Nuclear Science, 1978
- Satellite Anomalies from Galactic Cosmic RaysIEEE Transactions on Nuclear Science, 1975