Influence of oxygen on silicon resistivity
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8), 4206-4211
- https://doi.org/10.1063/1.328278
Abstract
The influence of oxygen on the resistivity of dislocation‐free silicon wafers was studied after annealing at various temperatures under a nitrogen ambient. Significant resistivity shifts were observed in the temperature range 600–900 °C and related to oxygen precipitation. This phenomenon is independent of the well‐known donor generation observed around 450 °C and is more difficult to cure.Keywords
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