Effect of Strong Electric Fields on Magneto‐Resistivity and Hall Coefficient in Semiconductors
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 23 (1), 423-427
- https://doi.org/10.1002/pssb.19670230144
Abstract
A calculation is made of the effect of high electric fields on the magneto‐resistance and Hall coefficients of semiconductors with parabolic energy bands. Three scattering mechanisms are considered i.e. acoustic, nonpolar optical, and polar optical.This publication has 3 references indexed in Scilit:
- On the Theory of Galvanomagnetic Phenomena in Strong Electric FieldsPhysica Status Solidi (b), 1967
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- The theory of electronic conduction in polar semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1953