Meaning of the photovoltaic band gap for amorphous semiconductors
- 15 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10), 953-955
- https://doi.org/10.1063/1.93353
Abstract
We introduce the concept of a photovoltaic band gap Epvg for amorphous solar cells. This is the minimum photon energy thermodynamically required for the generation, of two free carriers in an operating solar cell. For hydrogenated amorphous silicon the photovoltaic band gap is 1.57 eV at 1-sun illumination.Keywords
This publication has 5 references indexed in Scilit:
- Band tail recombination limit to the output voltage of amorphous silicon solar cellsApplied Physics Letters, 1982
- Optical characterization of amorphous silicon hydride filmsSolar Cells, 1980
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- Some Thermodynamics of Photochemical SystemsThe Journal of Chemical Physics, 1967
- Detailed Balance Limit of Efficiency of p-n Junction Solar CellsJournal of Applied Physics, 1961