Surface Transfer p-Type Doping of Epitaxial Graphene
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- 1 August 2007
- journal article
- research article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 129 (34), 10418-10422
- https://doi.org/10.1021/ja071658g
Abstract
Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.Keywords
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