Far-infrared study of localized states in In-dopedTe single crystals
- 15 March 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (8), 6712-6716
- https://doi.org/10.1103/physrevb.43.6712
Abstract
Far-infrared reflectivity spectra of a 1.2 at. % In-doped Te single crystal and galvanomagnetic data are presented. The infrared spectra were analyzed with use of a fitting procedure based on the plasmon-phonon interaction model. The plasma frequency was found to decrease at cooling from 300 to 30 K and a sharp drop in was observed between 20 and 10 K. In addition, at T≤20 K, a new structure on the reflectivity spectra is clearly observable. It may be associated with localized states in In-doped Te.
Keywords
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