A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (01608371), 940-943
- https://doi.org/10.1109/wcpec.2006.279611
Abstract
A new reaction model concerning the boron-oxygen related degradation is presented, introducing a third recombination inactive state, that stabilizes the electrical parameters of Cz-Si solar cells, and the transition to this new inactive state is proven by experimental data. Furthermore, the stability under solar cell working conditions and the formation kinetics of this additional state are discussedKeywords
This publication has 2 references indexed in Scilit:
- Electronically activated boron-oxygen-related recombination centers in crystalline siliconJournal of Applied Physics, 2006
- Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline siliconProgress In Photovoltaics, 2005