Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers
- 28 February 1997
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 44 (1-3), 125-129
- https://doi.org/10.1016/s0921-5107(96)01769-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAsIEEE Journal of Quantum Electronics, 1986
- 0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequenciesElectronics Letters, 1984