Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
- 1 December 1976
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12), 5405-5408
- https://doi.org/10.1063/1.322570
Abstract
Very uniform In0.53Ga0.47As was grown on InP by liquid phase epitaxy. The electron mobility is 8450 cm2/V sec at 300 K and 27700 cm2/V sec at 77 K. The mobility increases with decreasing temperature from 300 to 77 K in contrast to the results of In1−xGaxAs grown directly on GaAs by vapor phase epitaxy. The energy gap of this high‐mobility material is 0.750 eV at room temperature.Keywords
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