Self-Limiting Adsorption of SiCl2H2 and Its Application to the Layer-by-Layer Photochemical Process
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A), L209
- https://doi.org/10.1143/jjap.30.l209
Abstract
Adsorption of SiCl2H2 on the Ge(100) clean surface is investigated by X-ray photoelectron spectroscopy and thermal desorption spectrum measurement. It is concluded that the adsorption is self-limiting at temperatures below 350°C, and that the surface is reactivated by synchrotron radiation. The sequential processes of self-limiting adsorption of SiCl2H2 and synchrotron radiation are promising for development of Si atomic layer epitaxy.Keywords
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