Electrical properties of Ti and Cr ion implanted diamonds dependent on target temperature
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 822-825
- https://doi.org/10.1016/s0168-583x(87)80164-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Onset of hopping conduction in carbon-ion-implanted diamondPhysical Review B, 1985
- Electrical conductivity of nitrogen and argon implanted diamondNuclear Instruments and Methods in Physics Research, 1983
- A percolation theory approach to the implantation induced diamond to amorphous-carbon transitionRadiation Effects, 1980