Detection of H2S with Pd-gate MOS field-effect transistors
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (8), 3592-3593
- https://doi.org/10.1063/1.323162
Abstract
H2S gas sensitivity of Pd‐gate MOS field‐effect transistors has been studied in air for different temperatures. The possible chemical reactions of H2S and O2 on palladium are discussed.Keywords
This publication has 3 references indexed in Scilit:
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- Hydrogen leak detector using a Pd-gate MOS transistorReview of Scientific Instruments, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975