Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si
- 3 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (14), 1814-1816
- https://doi.org/10.1063/1.112852
Abstract
We have investigated visible photoluminescence excited by Ar ion laser (488 nm, 2.54 eV) at room temperature from Si+‐implanted thermal oxide films grown on crystalline Si wafer, as‐implanted and after subsequent annealing in vacuum. We found two types of visible luminescence bands similar to those of silica glasses; one band is observed in as‐implanted specimens and disappears after heating to about 600 °C, and the other band is observed only after heating the specimens to about 1100 °C. Though the shapes of these luminescence spectra are different from those having been observed in Si+‐implanted silica glass, the origins of these bands are the same as in silica glass. We discuss the similarities and the differences of luminescence bands in Si+‐implanted silica glasses and thermal oxide films grown on crystalline Si.Keywords
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