Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si

Abstract

We have investigated visible photoluminescence excited by Ar ion laser (488 nm, 2.54 eV) at room temperature from Si⁺‐implanted thermal oxide films grown on crystalline Si wafer, as‐implanted and after subsequent annealing in vacuum. We found two types of visible luminescence bands similar to those of silica glasses; one band is observed in as‐implanted specimens and disappears after heating to about 600 °C, and the other band is observed only after heating the specimens to about 1100 °C. Though the shapes of these luminescence spectra are different from those having been observed in Si⁺‐implanted silica glass, the origins of these bands are the same as in silica glass. We discuss the similarities and the differences of luminescence bands in Si⁺‐implanted silica glasses and thermal oxide films grown on crystalline Si.