High pressure dry oxidation kinetics of silicon—evidence of a highly stressed SiO2 structure
- 5 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (18), 1211-1213
- https://doi.org/10.1063/1.96984
Abstract
The kinetics of monocrystalline silicon oxidation using dry oxygen have been investigated over a wide range of pressure (14<PT B/A∼P0.7 and B∼P. The activation energy of B/A (1.70 eV) is lower than the experimental values observed in conventional thermal oxidation. Very high residual stress values have been found for these oxides together with high values of refractive index suggesting that the oxidation proceeded under compressive in‐grown stresses.Keywords
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