Entirely hydride VPE-grown 1.5μm DFB lasers have been obtained by means of high controllability in film thickness and alloy composition for the GalnAsP/InP system. A low threshold current of 13 mA was achieved by improving the growth method for the layer burying the grating. High uniformity in threshold current and lasing wavelength (Ith = 27.3 ± 9.7 mA, λ = 15571 ± 12Å) was obtained.