Room-Temperature Blue Gallium Nitride Laser Diode
- 21 June 1996
- journal article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 272 (5269), 1751-1752
- https://doi.org/10.1126/science.272.5269.1751
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- Electron beam effects on blue luminescence of zinc-doped GaNJournal of Luminescence, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986