Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1), 75-77
- https://doi.org/10.1063/1.95859
Abstract
The use of Si diffusion and impurity‐induced layer disordering, via a Si3N4 mask pattern, to construct stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers on n‐type substrates is described. This leads to a convenient form of index‐guided buried‐heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n‐type GaAs substrate.Keywords
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