Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Thermal redistribution of indium in amorphous silicon layersRadiation Effects, 1982
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960