Growth and Characterization of Ferroelectric Pb(Zr,Ti)OM3 Thin Films by Mocvd Using A 6 Inch Single Wafer Cvd System
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- MOCVD growth of BaTiO/sub 3/ in an 8" single-wafer CVD reactorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Preparation of Pb(Zr, Ti)O3 Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- Metalorganic Chemical Vapor Deposition of c-Axis Oriented PZT Thin FilmsJapanese Journal of Applied Physics, 1990