Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 765-769
- https://doi.org/10.1016/0169-4332(92)90510-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2Japanese Journal of Applied Physics, 1991
- Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and OxidationJapanese Journal of Applied Physics, 1991
- Sequential surface chemical reaction limited growth of high quality Al2O3 dielectricsApplied Physics Letters, 1989
- Characterization of surface exchange reactions used to grow compound filmsApplied Physics Letters, 1981