Double epitaxial silicon avalanche photodiodes for optical-fibre communications
- 1 January 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (10), 280-281
- https://doi.org/10.1049/el:19770206
Abstract
A new type of planar silicon avalanche photodiodes have been fabricated with a high-low impurity profile with a wide avalanche region by double epitaxy. The a.p.d. characteristics of low noise, high speed, high quantum efficiency and relatively low operating voltage make them particularly suitable for optical-fibre communication systems.Keywords
This publication has 1 reference indexed in Scilit:
- 100 Mb/s 12 km and 400 Mb/s 8 km optical-fibre transmission experimentsElectronics Letters, 1977