The Blocking Capability ot Alloyed Silicon Power Transistors

Abstract

An extensive series of silicon n-p-n alloyed transistors has been made. One set of these transistors has base thicknesses of 40-45 μ; the other, 55-60 μ. In each group the base resistiv ity is varied from 2 ohm-cm to 7000 ohm-cm. The "blocking capability" of these transistors is plotted against base resistivity. The results are compared with theory. Agreement is good. Details of the current-voltage characteristic are discussed. Three base resistivity regions are distinguished: 1) pure breakdown; 2) approximately simultaneous occurrence of breakdown and punch-through; and 3) pure punch-through.