Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors

Abstract

Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p‐type GaAs/Ga_0.71In_0.29As_0.39P_0.61 quantum well intersubband photodetectors grown by low‐pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile.